| PART |
Description |
Maker |
| IRGMH40F |
1200V DISCRETE Hi-Rel IGBT in a TO-254AA package
|
International Rectifier
|
| IRG7PH42UD IRG7PH42UD-EP |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
|
International Rectifier
|
| FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| IRG7PH35UD1-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG7PH35UD-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
|
International Rectifier
|
| IHW15T120 |
IGBTs & DuoPacks - 15A / 1200V IGBT and 9A / 1200V Diode in DuoPack
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
Infineon
|
| IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
|
Infineon Technologies AG
|
| IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
|
IRF[International Rectifier]
|
| IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
